High-temperature evolution of diamond-SiC composites

Diamond-SiC composites are attractive for improving the catastrophic fracture behaviour of SiC. However, fundamental knowledge is missing about structure this system and mechanism diamond graphitization. We used spark plasma sintering to study diamond-Si-SiC between 1600 2000?C in function nanocrystalline (ND) microcrystalline (MD) addition as well quantity Sibonding phase. Increasing temperature induces intense graphitization formation nano-onions, few-layered graphene well-ordered graphite prepared at elevated temperature. High resolution transmission electron microscopy demonstrates occurrence previously erroneously identified 5H-SiC polytype samples 2000?C. Regardless Si contents, SiC not confirmed even high